Features
- Form Factor: M.2
- Capacity: 1TB
- Sequential Read Speed: Up to 5,000 MB/s
- Sequential Write Speed: Up to 4,200 MB/s
General Feature
- Application: Client PCs
- FORM FACTOR: M.2 (2280)
- INTERFACE: PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0
- DIMENSION (WxHxD): 80 x 22 x 2.38mm
- WEIGHT: Max 9.0g Weight
- STORAGE MEMORY: Samsung V-NAND TLC
- CONTROLLER: Samsung in-house Controller
- CACHE MEMORY: HMB(Host Memory Buffer)
Special Feature
- TRIM SUPPORT: Supported
- S.M.A.R.T SUPPORT: Supported
- GC (GARBAGE COLLECTION): Auto Garbage Collection Algorithm
- ENCRYPTION SUPPORT: AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)
- WWN SUPPORT: Not supported
- DEVICE SLEEP MODE SUPPORT: Yes
Performance
- SEQUENTIAL READ: Up to 5,000 MB/s
- SEQUENTIAL WRITE: Up to 4,200 MB/s
- RANDOM READ (4KB, QD32): Up to 680,000 IOPS
- RANDOM WRITE (4KB, QD32): Up to 800,000 IOPS
- RANDOM READ (4KB, QD1): Up to 20,000 IOPS
- RANDOM WRITE (4KB, QD1): Up to 90,000 IOPS
Environment
- AVERAGE POWER CONSUMPTION(System Level): Average: Read 4.9 W / Write 4.5 W
- POWER CONSUMPTION (IDLE): Typical 60 mW
- POWER CONSUMPTION (DEVICE SLEEP): Typical 5 mW
- ALLOWABLE VOLTAGE: 3.3 V ± 5 % Allowable voltage
- RELIABILITY (MTBF): 1.5 Million Hours Reliability (MTBF)
- OPERATING TEMPERATURE: 0 – 70 ℃ Operating Temperature
- SHOCK: 1,500 G & 0.5 ms (Half sine)
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